EXAFS study on MBE grown CuInSe2 thin film

R. Shioda, Y. Okada, H. Oyanagi, S. Niki, P. J. Fons, A. Yamada, Y. Makita

研究成果: Article査読

抄録

The structures of CuInSe2(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/In ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/In ratio. The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the Cu-Se bond in Cu-rich region is stronger than that in In-rich region. We also compare the MBE grown CIS epitaxial layer, coevaporation thin layer and bulk sample.

本文言語English
ページ(範囲)X9-187
ジャーナルDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
60
3
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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