Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin-Film Transistors

Ryo Yamamoto, Kei Noda, Yasuo Wada, Toru Toyabe

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Contact doping effects in p-channel dinaphthothienothiphene (DNTT) thin-film transistors with a bottom-gate, top-contact configuration were investigated with both experimental and numerical approach. Characteristic variation in transistor parameters such as the gate threshold voltage and the field-effect mobility for devices with various channel lengths was suppressed by the contact doping with tetrafluorotetracyanoquinodimethane (F4TCNQ) as an acceptor dopant. The gate-voltage dependence of contact resistance and channel resistance was also evaluated separately to examine the contact doping effect in detail. In addition, device simulation considering a Schottky barrier at a metal/semiconductor interface successfully reproduced the experimental current–voltage characteristics by using a hole concentration of the active DNTT layer in the order of 1017 cm−3, which was estimated by capacitance–voltage measurement for a metal/insulator/semiconductor capacitor structure. This study suggests the importance of establishing both the carrier doping and carrier concentration measurements toward realizing practical applications of organic transistors.

本文言語English
ページ(範囲)61-68
ページ数8
ジャーナルElectronics and Communications in Japan
100
12
DOI
出版ステータスPublished - 2017 12

ASJC Scopus subject areas

  • 信号処理
  • 物理学および天文学(全般)
  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学
  • 応用数学

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