TY - JOUR
T1 - Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass
AU - Hosono, H.
AU - Abe, Y.
AU - Imagawa, H.
AU - Imai, H.
AU - Arai, K.
N1 - Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1991
Y1 - 1991
N2 - We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5×10-17 cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.
AB - We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5×10-17 cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.
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U2 - 10.1103/PhysRevB.44.12043
DO - 10.1103/PhysRevB.44.12043
M3 - Article
AN - SCOPUS:0001634099
VL - 44
SP - 12043
EP - 12045
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 2469-9950
IS - 21
ER -