Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass

H. Hosono, Y. Abe, H. Imagawa, H. Imai, K. Arai

研究成果: Article査読

128 被引用数 (Scopus)

抄録

We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5×10-17 cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.

本文言語English
ページ(範囲)12043-12045
ページ数3
ジャーナルPhysical Review B
44
21
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics

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