抄録
We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5×10-17 cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 12043-12045 |
| ページ数 | 3 |
| ジャーナル | Physical Review B |
| 巻 | 44 |
| 号 | 21 |
| DOI | |
| 出版ステータス | Published - 1991 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学