抜粋
We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5×10-17 cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 12043-12045 |
| ページ数 | 3 |
| ジャーナル | Physical Review B |
| 巻 | 44 |
| 発行部数 | 21 |
| DOI | |
| 出版物ステータス | Published - 1991 1 1 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
フィンガープリント Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Hosono, H., Abe, Y., Imagawa, H., Imai, H., & Arai, K. (1991). Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass. Physical Review B, 44(21), 12043-12045. https://doi.org/10.1103/PhysRevB.44.12043