Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

Ken Uchida, Junji Koga, Ryuji Ohba, Toshinori Numata, Shin ichi Takagi

    研究成果: Conference article査読

    67 被引用数 (Scopus)

    抄録

    The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.

    本文言語English
    ページ(範囲)633-636
    ページ数4
    ジャーナルTechnical Digest - International Electron Devices Meeting
    出版ステータスPublished - 2001 12 1
    イベントIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
    継続期間: 2001 12 22001 12 5

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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