The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness TSOI is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as TSOI decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as TSOI decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 2001 12 1|
|イベント||IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States|
継続期間: 2001 12 2 → 2001 12 5
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