Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs

Ken Uchida, Ricardo Zednik, Ching Huang Lu, Hemanth Jagannathan, James McVittie, Paul C. McIntyre, Yoshio Nishi

    研究成果: Conference article査読

    75 被引用数 (Scopus)

    抄録

    The biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body (UTB) SOI MOSFET with T SOI of less than 5nm were investigated. It was demonstrated that in bulk nMOSFETs, electron mobility enhancement is stronger in the order of biaxial tensile, <100> uniaxial tensile, and <100> uniaxial tensile strains. In bulk pMOSFET, hole mobility is stronger in the order of <110> uniaxial compressive, <100> uniaxial compressive, and biaxial tensile strains. It was shown that the uniaxial strain is effective to enhance both electron and hole mobility in UTB MOSFETs with T SOI of down to at least 2.5nm. The subband structure engineering in UTB MOSFETs can cooperate with strain engineering to enhance mobility.

    本文言語English
    ページ(範囲)229-232
    ページ数4
    ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
    出版ステータスPublished - 2004 12 1
    イベントIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
    継続期間: 2004 12 132004 12 15

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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