Experimental study on deformation potential (Dac) in MOSFETs: Demonstration of increased Dac at MOS interfaces and its impact on electron mobility

Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida

    研究成果: Article査読

    8 被引用数 (Scopus)

    抄録

    Deformation potential (Dac), which is one of the most important parameters determining the rate of electronacoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, back-gate biases, and device structures. It is demonstrated that Dac increases sharply at the MOS interface. To investigate the impact of the increased Dac on μe, thick body-channel SOI MOSFETs, where drain current flows in the entire SOI layers, was fabricated. The carrier transport experiments reveal that μe of greater than 1100 cm2V-1s-1 is obtained in body-channel SOI MOSFETs with the SOI thickness of greater than 70 nm. By taking into account the Dac profile around the MOS interface, experimental μe of SOI MOSFETs is numerically reproduced over a wide range of SOI thicknesses. μe of the body-channel SOI MOSFETs is also well reproduced using the same Dac profile. Thus, it is concluded that Dac increases sharply at the Si/SiO2 interface. The accurate modeling of the increased Dac around the Si/SiO2 interface is indispensable for designing high-performance and/or low-power 3-D MOSFETs including FinFETs, extremely thin SOI MOSFETs, and nanowire MOSFETs, because these types of MOSFETs have greater interface-to-volume ratios.

    本文言語English
    論文番号7492205
    ページ(範囲)278-285
    ページ数8
    ジャーナルIEEE Journal of the Electron Devices Society
    4
    5
    DOI
    出版ステータスPublished - 2016 9

    ASJC Scopus subject areas

    • Biotechnology
    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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