External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications

Hideki Shibutani, Yasunori Tomomatsu, Yoshinori Sawado, Katsumi Yoshizawa, Hideaki Asakura, Nazirul Afham Idris, Hiroyuki Tsuda

    研究成果: Conference contribution

    2 被引用数 (Scopus)


    Utilizing T-band (1000 nm to 1260 nm) for optical communications is promising for short reach, and large capacity networks, such as data centers or access networks. It is feasible to use this with low-cost coarse wavelength division multiplexing (WDM). However, a tunable wavelength light source is necessary for such applications. In this paper, we propose a new configuration for an external cavity laser, which uses a silica-based arrayed waveguide grating (AWG) for the wavelength selecting element. The external cavity laser consists of a gain chip with high reflection (HR) and anti-reflection (AR) coated facets, coupling lenses, an AWG with AR/HR coatings, and an output fiber. The AWG has 17 connection ports, which correspond to 17 wavelengths with a channel spacing of 1.67 nm. The width of the connection port waveguides was optimized to achieve high coupling efficiency. The AWG chip size is 15 mm x 30 mm. The active layer in the gain chip has InAs quantum dots. The spontaneous emission 3-dB bandwidth was 48 nm (1108 nm to 1156 nm) when a current of 150 mA was injected into the gain chip. The lasing wavelength of the external cavity laser was successfully tuned from 1129.9 nm to 1154.4 nm by selecting the connection ports of the AWG. The typical threshold current was about 130 mA.

    ホスト出版物のタイトルIntegrated Optics
    ホスト出版物のサブタイトルDevices, Materials, and Technologies XIX
    編集者Jean-Emmanuel Broquin, Gualtiero Nunzi Conti
    出版ステータスPublished - 2015 1月 1
    イベントIntegrated Optics: Devices, Materials, and Technologies XIX - San Francisco, United States
    継続期間: 2015 2月 92015 2月 11


    名前Proceedings of SPIE - The International Society for Optical Engineering


    OtherIntegrated Optics: Devices, Materials, and Technologies XIX
    国/地域United States
    CitySan Francisco

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • コンピュータ サイエンスの応用
    • 応用数学
    • 電子工学および電気工学


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