Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Laurent Daniel Haret; Takasumi Tanabe; Eiichi Kuramochi; Masaya Notomi

doi:10.1364/OE.17.021108

Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Laurent Daniel Haret, Takasumi Tanabe, Eiichi Kuramochi, Masaya Notomi

研究成果: Article › 査読

99 被引用数 (Scopus)

抄録

We demonstrate optical bistability in silicon using a high-Q (Q > 10⁵) one-dimensional photonic crystal nanocavity at an extremely low 1.6 μW input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of ∼ 0.5 μus.

本文言語	English
ページ（範囲）	21108-21117
ページ数	10
ジャーナル	Optics Express
巻	17
号	23
DOI	https://doi.org/10.1364/OE.17.021108
出版ステータス	Published - 2009
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学

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10.1364/OE.17.021108

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Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

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