Fabrication and electrochemical properties of boron-doped SiC

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Silicon carbide (SiC) has excellent properties such as chemical and physical stability, biocompatibility, and high thermal conductivity. However, electrical conductivity of SiC is not high enough for electrochemical applications, which has been a major challenge. Here, in order to improve the conductivity, we prepared boron-doped SiC (SiC:B) and evaluated the electrochemical properties. SiC and SiC:B were fabricated by a microwave plasma chemical vapor deposition method. Structural characterization revealed that the main phase of SiC:B is 3C–SiC where the concentration of doped boron could be controlled by tuning the growth conditions. Electrochemical properties were evaluated by cyclic voltammetry measurements, indicating that the reactivity and sensitivity of the SiC:B electrode was comparable of that of the glassy carbon electrode.

本文言語English
ページ(範囲)240-247
ページ数8
ジャーナルCarbon
174
DOI
出版ステータスPublished - 2021 4月 15

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)

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