Fabrication method of sub-micrometer size planar gap for the micro fabry-perot interferometer

T. Dohi, H. Hayashi, H. Onoe, K. Matsumoto, I. Shimoyama

研究成果: Conference contribution

5 引用 (Scopus)

抜粋

This paper reports on a fabrication method of sub-micrometer size tunable planar gaps for micro Fabry-Perot interferometers. We made an upper unit with a movable sub-micrometer step and a lower unit, separately. The upper unit was picked up and transferred to the lower unit by the stamping apparatus, and bonded to the lower unit by fusion bonding. Since the force during fusion bonding acts within a few nanometers only, the sub-micrometer size planar gap can be built. By using this fabrication method, we fabricated the 850 nm gap with a movable planar mirror of 500 μm in diameter. The gap was changed from 825 nm to 1020 nm by applying the voltage of 24 V.

元の言語English
ホスト出版物のタイトルMEMS 2008 Tucson - 21st IEEE International Conference on Micro Electro Mechanical Systems
ページ335-338
ページ数4
DOI
出版物ステータスPublished - 2008 8 29
外部発表Yes
イベント21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008 Tucson - Tucson, AZ, United States
継続期間: 2008 1 132008 1 17

出版物シリーズ

名前Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN(印刷物)1084-6999

Other

Other21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008 Tucson
United States
Tucson, AZ
期間08/1/1308/1/17

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

これを引用

Dohi, T., Hayashi, H., Onoe, H., Matsumoto, K., & Shimoyama, I. (2008). Fabrication method of sub-micrometer size planar gap for the micro fabry-perot interferometer. : MEMS 2008 Tucson - 21st IEEE International Conference on Micro Electro Mechanical Systems (pp. 335-338). [4443661] (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2008.4443661