Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current

Shintaro Sato, Akio Kawabata, Tatsuhiro Nozue, Daiyu Hondo, Tomo Murakami, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano

研究成果: Article

9 引用 (Scopus)

抜粋

We fabricated carbon nanotube (CNT) via interconnects (vertical wiring) and evaluated their robustness over a high-density current. Multiwalled carbon nanotubes (MWNTs) were grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. MWNTs were successfully grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT vias were able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 h without any deterioration in their properties.

元の言語English
ページ(範囲)373-383
ページ数11
ジャーナルSensors and Materials
21
発行部数7
出版物ステータスPublished - 2009 11 27
外部発表Yes

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ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)

これを引用

Sato, S., Kawabata, A., Nozue, T., Hondo, D., Murakami, T., Hyakushima, T., Nihei, M., & Awano, Y. (2009). Fabrication of carbon nanotube via interconnects at low temperature and their robustness over a high-density current. Sensors and Materials, 21(7), 373-383.