Fabrication of gate-all-around MOSFET by silicon anisotropic etching technique

Toshikazu Mukaiyama, Ken Ichi Saito, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

研究成果: Article査読

8 被引用数 (Scopus)

抄録

A novel fabrication process of gate-all-around (GAA) MOSFETs using an anisotropic etching technique has been proposed. In this technology, the channel width of the GAA device is not limited by the lithography resolution and the density of the wire channel is doubled. The two-dimensional device simulation shows much better short channel immunity of GAA devices than that of single gate and double gate SOI MOSFETs. The simulation also shows that the new GAA devices we have proposed have higher current drivability than the conventional GAA and single gate SOI devices.

本文言語English
ページ(範囲)1623-1626
ページ数4
ジャーナルSolid-State Electronics
42
7-8
DOI
出版ステータスPublished - 1998 1 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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