A novel fabrication process of gate-all-around (GAA) MOSFETs using an anisotropic etching technique has been proposed. In this technology, the channel width of the GAA device is not limited by the lithography resolution and the density of the wire channel is doubled. The two-dimensional device simulation shows much better short channel immunity of GAA devices than that of single gate and double gate SOI MOSFETs. The simulation also shows that the new GAA devices we have proposed have higher current drivability than the conventional GAA and single gate SOI devices.
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