Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule

Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Article

10 引用 (Scopus)

抄録

In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

元の言語English
ページ(範囲)396-398
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
発行部数1 B
出版物ステータスPublished - 1999
外部発表Yes

Fingerprint

Point contacts
MOSFET devices
metal oxide semiconductors
micrometers
field effect transistors
Fabrication
fabrication
Lithography
Transistors
Electric properties
Silicon
surface layers
transistors
Substrates
lithography
Metals
electrical properties
insulators
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

これを引用

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abstract = "In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.",
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AU - Ishikuro, Hiroki

AU - Hiramoto, Toshiro

PY - 1999

Y1 - 1999

N2 - In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

AB - In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

KW - Anisotropic etching

KW - Coulomb blockade

KW - Silicon-on-insulator substrate

KW - Single electron transistor

KW - SiO/SiN double layer mask

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