Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule

Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Conference article

10 引用 (Scopus)

抜粋

In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

元の言語English
ページ(範囲)396-398
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
発行部数1 B
DOI
出版物ステータスPublished - 1999 1 1
外部発表Yes
イベントProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
継続期間: 1998 5 311998 6 4

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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