Fabrication of porous metal oxide semiconductor films by a self-template method using layered hydroxide metal acetates

Shinobu Fujihara, Eiji Hosono, Toshio Kimura

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Porous metal oxide (Co3O4, NiO, or ZnO) films were fabricated by a self-template method using layered hydroxide metal acetates (LHMA; metal = Co, Ni, or Zn) as templates. LHMAs were initially grown on glass substrates through a chemical bath deposition in methanolic-aqueous solutions of metal acetates at 60°C. The template films had a unique, nest-like morphology consisting of interlaced flake-like particles as a result of two-dimensional crystal growth of LHMAs in supersaturated solutions. The templates were successfully converted into porous Co3O4, NiO, or ZnO films by heating at 500°C for 10 min in air without microstructural deformation.

本文言語English
ページ(範囲)165-168
ページ数4
ジャーナルJournal of Sol-Gel Science and Technology
31
1-3 SPEC.ISS.
DOI
出版ステータスPublished - 2004 8月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 化学 (全般)
  • 生体材料
  • 凝縮系物理学
  • 材料化学

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