Fabrication of Si nanostructures for single electron device applications by anisotropic etching

Toshiro Hiramoto, Hiroki Ishikuro, Kenichi Saito, Tomoyuki Fujii, Takuya Saraya, Gen Hashiguchi, Toshiaki Ikoma

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Si nanostructures for single electron device applications are successfully fabricated using a newly developed anisotropic etching technique. The minimum size of the Si nanostructures is about 10 nm, which is much smaller than the lithography limit. The novel process involves two anisotropic etching steps and one selective oxidation step, and is fully compatible with very large scale integration (VLSI) processes. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations indicate that the fabricated nanostructures are very uniform and atomically controlled. This process is promising for the future integration of single electron devices into VLSI chips.

本文言語English
ページ(範囲)6664-6667
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
12 SUPPL. B
DOI
出版ステータスPublished - 1996 12月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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