Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

Takasumi Tanabe, Katsuhiko Nishiguchi, Akihiko Shinya, Eiichi Kuramochi, Hiroshi Inokawa, Masaya Notomi, Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroshi Fukuda, Hiroyuki Shinojima, Seiichi Itabashi

研究成果: Article

140 引用 (Scopus)

抜粋

On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window (∼70 ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100 fJ).

元の言語English
記事番号031115
ジャーナルApplied Physics Letters
90
発行部数3
DOI
出版物ステータスPublished - 2007 1 29
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Tanabe, T., Nishiguchi, K., Shinya, A., Kuramochi, E., Inokawa, H., Notomi, M., Yamada, K., Tsuchizawa, T., Watanabe, T., Fukuda, H., Shinojima, H., & Itabashi, S. (2007). Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities. Applied Physics Letters, 90(3), [031115]. https://doi.org/10.1063/1.2431767