Ferroelectric switching in epitaxial GeTe films

A. V. Kolobov, D. J. Kim, A. Giussani, P. Fons, J. Tominaga, R. Calarco, A. Gruverman

研究成果: Article査読

58 被引用数 (Scopus)

抄録

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

本文言語English
論文番号066101
ジャーナルAPL Materials
2
6
DOI
出版ステータスPublished - 2014 6月 2
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)

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