First-principles calculations of uniaxial strain effects on manganese in silicon

Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima

研究成果: Article

1 引用 (Scopus)

抄録

Uniaxial strain effects on manganese in silicon are investigated using the first-principles calculations. Manganese doping is shown to enhance the increase rate of vertical strain as a function of lateral strain by ∼10%. The formation energy of manganese in silicon decreases by 0.1 eV at a lateral strain of 3.3%. The magnetic moments of manganese remain at 3μB being independent of the strain magnitude. These results are found in both substitutional and interstitial tetrahedral manganese. An analysis of detailed calculation results reveals that these properties are realized by the impact of uniaxial strain on the electronic states of manganese.

元の言語English
ページ(範囲)26-30
ページ数5
ジャーナルJapanese Journal of Applied Physics
47
発行部数1
DOI
出版物ステータスPublished - 2008 1 18

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axial strain
Manganese
manganese
Silicon
silicon
Electronic states
energy of formation
Magnetic moments
interstitials
magnetic moments
Doping (additives)
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

First-principles calculations of uniaxial strain effects on manganese in silicon. / Yabuuchi, Shin; Ohta, Eiji; Kageshima, Hiroyuki.

:: Japanese Journal of Applied Physics, 巻 47, 番号 1, 18.01.2008, p. 26-30.

研究成果: Article

Yabuuchi, Shin ; Ohta, Eiji ; Kageshima, Hiroyuki. / First-principles calculations of uniaxial strain effects on manganese in silicon. :: Japanese Journal of Applied Physics. 2008 ; 巻 47, 番号 1. pp. 26-30.
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