抄録
Uniaxial strain effects on manganese in silicon are investigated using the first-principles calculations. Manganese doping is shown to enhance the increase rate of vertical strain as a function of lateral strain by ∼10%. The formation energy of manganese in silicon decreases by 0.1 eV at a lateral strain of 3.3%. The magnetic moments of manganese remain at 3μB being independent of the strain magnitude. These results are found in both substitutional and interstitial tetrahedral manganese. An analysis of detailed calculation results reveals that these properties are realized by the impact of uniaxial strain on the electronic states of manganese.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 26-30 |
| ページ数 | 5 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 47 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 2008 1月 18 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）