抄録
Uniaxial strain effects on manganese in silicon are investigated using the first-principles calculations. Manganese doping is shown to enhance the increase rate of vertical strain as a function of lateral strain by ∼10%. The formation energy of manganese in silicon decreases by 0.1 eV at a lateral strain of 3.3%. The magnetic moments of manganese remain at 3μB being independent of the strain magnitude. These results are found in both substitutional and interstitial tetrahedral manganese. An analysis of detailed calculation results reveals that these properties are realized by the impact of uniaxial strain on the electronic states of manganese.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 26-30 |
| ページ数 | 5 |
| ジャーナル | Japanese Journal of Applied Physics |
| 巻 | 47 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | Published - 2008 1 18 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
First-principles calculations of uniaxial strain effects on manganese in silicon. / Yabuuchi, Shin; Ohta, Eiji; Kageshima, Hiroyuki.
：: Japanese Journal of Applied Physics, 巻 47, 番号 1, 18.01.2008, p. 26-30.研究成果: Article
}
TY - JOUR
T1 - First-principles calculations of uniaxial strain effects on manganese in silicon
AU - Yabuuchi, Shin
AU - Ohta, Eiji
AU - Kageshima, Hiroyuki
PY - 2008/1/18
Y1 - 2008/1/18
N2 - Uniaxial strain effects on manganese in silicon are investigated using the first-principles calculations. Manganese doping is shown to enhance the increase rate of vertical strain as a function of lateral strain by ∼10%. The formation energy of manganese in silicon decreases by 0.1 eV at a lateral strain of 3.3%. The magnetic moments of manganese remain at 3μB being independent of the strain magnitude. These results are found in both substitutional and interstitial tetrahedral manganese. An analysis of detailed calculation results reveals that these properties are realized by the impact of uniaxial strain on the electronic states of manganese.
AB - Uniaxial strain effects on manganese in silicon are investigated using the first-principles calculations. Manganese doping is shown to enhance the increase rate of vertical strain as a function of lateral strain by ∼10%. The formation energy of manganese in silicon decreases by 0.1 eV at a lateral strain of 3.3%. The magnetic moments of manganese remain at 3μB being independent of the strain magnitude. These results are found in both substitutional and interstitial tetrahedral manganese. An analysis of detailed calculation results reveals that these properties are realized by the impact of uniaxial strain on the electronic states of manganese.
KW - First-principle calculation
KW - Magnetism
KW - Manganese impurity
KW - Stability
KW - Strained silicon
UR - http://www.scopus.com/inward/record.url?scp=38549152786&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38549152786&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.26
DO - 10.1143/JJAP.47.26
M3 - Article
AN - SCOPUS:38549152786
VL - 47
SP - 26
EP - 30
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1
ER -