First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies

Norihisa Oyama, Eiji Ohta, Kyozaburo Takeda, Kenji Shiraishi, Hiroshi Yamaguchi

研究成果: Conference article

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We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.

元の言語English
ページ(範囲)256-259
ページ数4
ジャーナルJournal of Crystal Growth
201
DOI
出版物ステータスPublished - 1999 5
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 1998 8 311998 9 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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