First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies

Norihisa Oyama, Eiji Ohta, Kyozaburo Takeda, Kenji Shiraishi, Hiroshi Yamaguchi

研究成果: Article

8 引用 (Scopus)

抄録

We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.

元の言語English
ページ(範囲)256-259
ページ数4
ジャーナルJournal of Crystal Growth
201
DOI
出版物ステータスPublished - 1999 5

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Crystal atomic structure
Epilayers
Dislocations (crystals)
atomic structure
Electronic structure
electronic structure
Scanning tunneling microscopy
Epitaxial growth
scanning tunneling microscopy
Atoms
atoms
gallium arsenide
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies. / Oyama, Norihisa; Ohta, Eiji; Takeda, Kyozaburo; Shiraishi, Kenji; Yamaguchi, Hiroshi.

:: Journal of Crystal Growth, 巻 201, 05.1999, p. 256-259.

研究成果: Article

Oyama, Norihisa ; Ohta, Eiji ; Takeda, Kyozaburo ; Shiraishi, Kenji ; Yamaguchi, Hiroshi. / First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies. :: Journal of Crystal Growth. 1999 ; 巻 201. pp. 256-259.
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abstract = "We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.",
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AU - Ohta, Eiji

AU - Takeda, Kyozaburo

AU - Shiraishi, Kenji

AU - Yamaguchi, Hiroshi

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