First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal

Hiroki Kishi, Miki Miyazawa, Naoki Matsushima, Jun Yamauchi

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.

本文言語English
ページ(範囲)226-229
ページ数4
ジャーナルAIP Conference Proceedings
1583
DOI
出版ステータスPublished - 2014
イベント2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China
継続期間: 2014 8 182014 8 22

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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