We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.
|ジャーナル||AIP Conference Proceedings|
|出版ステータス||Published - 2014|
|イベント||2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China|
継続期間: 2014 8月 18 → 2014 8月 22
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