Formation of Highly Ordered Semiconducting Anthracene Monolayer Rigidly Connected to Insulating Alkanethiolate Thin Film

Toyoaki Eguchi, Naoyuki Hirata, Masahiro Shibuta, Hironori Tsunoyama, Atsushi Nakajima

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The formation and molecular structure of a self-assembled monolayer (SAM) of anthracene-substituted alkanethiol on Au(111) have been investigated by scanning tunneling microscopy and infrared reflection absorption spectroscopy. A clean and well-ordered SAM composed of densely packed "standing-up" molecules is formed by a wet-chemical process in air, followed by thermal annealing in vacuum. In the SAM, anthracene moieties are arranged in a bulklike in-plane herringbone structure and keep their crystalline ordering above room temperature, which is in contrast to the less ordering in Au nanoclusters ligated by the anthracene-alkanethiolates. In addition, hexagonal arrangement of anthracene dimer is found on the surface of the SAM. These structures remain after annealing at 400 K. Scanning tunneling spectroscopy performed on the surface shows an energy gap of ∼3.6 eV, similar to the band gap of bulk anthracene. The above results demonstrate that the highly ordered semiconducting anthracene monolayer is successfully formed on the insulating alkanethiolate thin film and has high thermal stability due to a strong chemical bonding across the interface.

本文言語English
ページ(範囲)26080-26087
ページ数8
ジャーナルJournal of Physical Chemistry C
122
45
DOI
出版ステータスPublished - 2018 11月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜

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