Formation of nitrogen-vacancy centers in homoepitaxial diamond thin films grown via microwave plasma-assisted chemical vapor deposition

Hideyuki Watanabe, Hitoshi Umezawa, Toyofumi Ishikawa, Kazuki Kaneko, Shinichi Shikata, Junko Ishi-Hayase, Kohei M. Itoh

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A model for controlling the two-dimensional distribution of negatively charged nitrogen-vacancy (NV- ) fluorescent centers near the surface of a diamond crystal is presented, using only a microwave plasma-assisted chemical vapor deposition (CVD) method. In this approach, a CVD diamond layer is homoepitaxialy grown via microwave plasma-assisted CVD using an isotopically enriched methane (12CH4), hydrogen (H2), and nitrogen (N2) gas mixture on patterned diamond (0 0 1). When the surface is imaged by means of confocal microscope photoluminescence mapping, fine grooves are observed to have been generated artificially on the diamond surface. NV- centers are found to be distributed selectively into these grooves. These results demonstrate an effective means for the formation of NV- centers of selectable size and density via microwave plasma-assisted CVD, with potential application in the production of diamond quantum sensors.

本文言語English
論文番号7466817
ページ(範囲)614-618
ページ数5
ジャーナルIEEE Transactions on Nanotechnology
15
4
DOI
出版ステータスPublished - 2016 7月
外部発表はい

ASJC Scopus subject areas

  • コンピュータ サイエンスの応用
  • 電子工学および電気工学

フィンガープリント

「Formation of nitrogen-vacancy centers in homoepitaxial diamond thin films grown via microwave plasma-assisted chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル