Functional design of a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO 2 etching

Kazunobu Maeshige, Gentaro Washio, Takashi Yagisawa, Toshiaki Makabe

研究成果: Article

61 引用 (Scopus)

抄録

A capacitively coupled plasma (CCP) with a different frequency source at each of two parallel plates is a powerful tool for SiO 2 etching. A time modulation of two-frequency CCP by a pulsed-power operation will be one of the practical solutions in the next generation of etchers, and will allow charging-free plasma processes for high-aspect-ratio holes or trench etching. We numerically predict the structure and functions of a pulsed two-frequency CCP in CF 4(5%)/Ar, and discuss its ability to generate charge-free plasma processes. We also investigate the functional separation between plasma production by very high frequency (100 MHz) and bias voltage application by low frequency (1 MHz). Alternate injections of high-energy positive and negative ions are predicted during the off-phase of a pulsed two-frequency CCP.

元の言語English
ページ(範囲)9494-9501
ページ数8
ジャーナルJournal of Applied Physics
91
発行部数12
DOI
出版物ステータスPublished - 2002 6 15

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etching
very high frequencies
high aspect ratio
parallel plates
positive ions
negative ions
charging
injection
low frequencies
modulation
electric potential
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

Functional design of a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO 2 etching. / Maeshige, Kazunobu; Washio, Gentaro; Yagisawa, Takashi; Makabe, Toshiaki.

:: Journal of Applied Physics, 巻 91, 番号 12, 15.06.2002, p. 9494-9501.

研究成果: Article

Maeshige, Kazunobu ; Washio, Gentaro ; Yagisawa, Takashi ; Makabe, Toshiaki. / Functional design of a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO 2 etching. :: Journal of Applied Physics. 2002 ; 巻 91, 番号 12. pp. 9494-9501.
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