Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining

Jiwang Yan, Tooru Asami, Hirofumi Harada, Tsunemoto Kuriyagawa

研究成果: Article査読

173 被引用数 (Scopus)

抄録

Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.

本文言語English
ページ(範囲)378-386
ページ数9
ジャーナルPrecision Engineering
33
4
DOI
出版ステータスPublished - 2009 10
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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