GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying

Hiroki Kurumatani, Seiichiro Katsura

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

The paper presents a design method of a gallium-nitride high-electron-mobility-transistor (GaN-HEMT) based three level T-type neutral-point-clamped (NPC) inverter using a reverse-conducting mode of the GaN-HEMT. The GaN-HEMT provides high-frequency switching speed and the T-type inverter supports such switching by decreasing conduction loss and heat dissipation. The GaN-HEMT has two operation mode, an enhancement mode and the reverse-conducting mode. In the enhancement mode, resistance on the GaN-HEMT is controlled by gate-source voltage. The reverse-conducting mode appears when gate-source voltage is less than zero. This characteristic provides advantage on design of the T-type NPC inverter. Then, the paper shows that a normally-off inverter is easily attained by using the reverse-conducting mode. Verification of the designed-circuit is conducted by some validation.

本文言語English
ホスト出版物のタイトルProceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1941-1946
ページ数6
ISBN(電子版)9781509014125
DOI
出版ステータスPublished - 2017 8 3
イベント26th IEEE International Symposium on Industrial Electronics, ISIE 2017 - Edinburgh, Scotland, United Kingdom
継続期間: 2017 6 182017 6 21

Other

Other26th IEEE International Symposium on Industrial Electronics, ISIE 2017
CountryUnited Kingdom
CityEdinburgh, Scotland
Period17/6/1817/6/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

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