Geometric and electronic structures of metal (M)-doped silicon cluster (M = Ti, Hf, Mo and W)

Michiaki Ohara, Kiichirou Koyasu, Atsushi Nakajima, Koji Kaya

研究成果: Article査読

178 被引用数 (Scopus)

抄録

We have studied geometric and electronic structures of metal (M) atom doped silicon (Si) clusters, MSin (M = Ti, Hf, Mo and W), using mass spectrometry, a chemical-probe method and photoelectron spectroscopy. In the mass spectra for all of the mixed cluster anions, MSin -, both MSi15 - and MSi16 - were abundantly produced compared to neighbors. Together with the result of the adsorption reactivity and photoelectron spectroscopy, it has been revealed that one metal atom can be encapsulated inside a Sin cage at n ≥ 15.

本文言語English
ページ(範囲)490-497
ページ数8
ジャーナルChemical Physics Letters
371
3-4
DOI
出版ステータスPublished - 2003 4 7

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理化学および理論化学

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