抜粋
We have studied geometric and electronic structures of metal (M) atom doped silicon (Si) clusters, MSin (M = Ti, Hf, Mo and W), using mass spectrometry, a chemical-probe method and photoelectron spectroscopy. In the mass spectra for all of the mixed cluster anions, MSin -, both MSi15 - and MSi16 - were abundantly produced compared to neighbors. Together with the result of the adsorption reactivity and photoelectron spectroscopy, it has been revealed that one metal atom can be encapsulated inside a Sin cage at n ≥ 15.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 490-497 |
| ページ数 | 8 |
| ジャーナル | Chemical Physics Letters |
| 巻 | 371 |
| 発行部数 | 3-4 |
| DOI | |
| 出版物ステータス | Published - 2003 4 7 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
フィンガープリント Geometric and electronic structures of metal (M)-doped silicon cluster (M = Ti, Hf, Mo and W)' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Ohara, M., Koyasu, K., Nakajima, A., & Kaya, K. (2003). Geometric and electronic structures of metal (M)-doped silicon cluster (M = Ti, Hf, Mo and W). Chemical Physics Letters, 371(3-4), 490-497. https://doi.org/10.1016/S0009-2614(03)00299-9