Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy

T. Saiki, K. Takeuchi, M. Kuwata-Gonokami, T. Mitsuyu, K. Ohkawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In the low exciton density regime, we study the optical nonlinearity in the exciton resonant region in ZnSe grown by MBE on a GaAs substrate. At low temperature, excitons in bulk ZnSe largely contribute to enhance the nonlinearity. Using reflection type polarization spectroscopy with weak picosecond pulses, we evaluate third-order susceptibility and obtain huge value of χ(3), over 10-2 esu. From a degenerate four-wave mixing experiment with different polarization combinations, it is found that this huge nonlinearity originates from the exciton-exciton interaction.

本文言語English
ページ(範囲)802-805
ページ数4
ジャーナルJournal of Crystal Growth
117
1-4
DOI
出版ステータスPublished - 1992 2 2
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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