Graphene modulation channel-width field effect transistors enabling high carrier velocity acceleration and bandgap introduction

Aizuddin Mohamad, Yuji Awano

    研究成果: Article査読

    1 被引用数 (Scopus)

    抄録

    The electrical properties of an advanced graphene FETstructure with local channel width modulation were theoretically investigated with the aim of increasing the local electric field along the channel and creating a bandgap by introducing a graphene nanoribbon (GNR) array. A semi-classical Monte Carlo particle method was used to simulate near ballistic electron transport combination with ab-initio calculation for successfully determining electronic states. Performance improvement was achieved in terms of the carriers' transit time, even though there was a tradeoff between the bandgap creation and electron mobility in graphene.

    本文言語English
    論文番号115102
    ジャーナルApplied Physics Express
    8
    11
    DOI
    出版ステータスPublished - 2015 11 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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