Growth and characterization of 28Sin/ 30Sin isotope superlattices

T. Kojima; R. Nebashi; K. M. Itoh; Y. Shiraki

doi:10.1063/1.1613365

Growth and characterization of ²⁸Si_n/ ³⁰Si_n isotope superlattices

T. Kojima, R. Nebashi, K. M. Itoh, Y. Shiraki

塾長

研究成果: Article › 査読

50 被引用数 (Scopus)

抄録

A study is performed on characterization and growth of ²⁸Si _n/³⁰Si_n isotope superlattices. The thickness of each isotope layer has been controlled using solid-source molecular beam epitaxy, to produce isotope superlattices. The confinement of phonons within specific isotope layers is shown by Raman spectroscopy.

本文言語	English
ページ（範囲）	2318-2320
ページ数	3
ジャーナル	Applied Physics Letters
巻	83
号	12
DOI	https://doi.org/10.1063/1.1613365
出版ステータス	Published - 2003 9月 22

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1613365

他のファイルとリンク

引用スタイル

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abstract = "A study is performed on characterization and growth of 28Si n/30Sin isotope superlattices. The thickness of each isotope layer has been controlled using solid-source molecular beam epitaxy, to produce isotope superlattices. The confinement of phonons within specific isotope layers is shown by Raman spectroscopy.",

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