Growth and electrical properties of ZnO thin films deposited by novel ion plating method

K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, M. Matsubara, H. Tampo, S. Niki

研究成果: Conference article

44 引用 (Scopus)

抜粋

The URT(Uramoto-gun with Tanaka magnetic field)-IP(ion plating) method is a technique for depositing a thin film on a substrate. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the material properties were evaluated. The quality of ZnO thin films grown by the URT-IP method was found to be sensitive to oxygen supply during growth. It was observed that the saturation point of the growth rate corresponding to the optimum oxygen supply leads to the best electrical properties. The profiles of the dependence of film properties on oxygen supply revealed a part of growth mechanism of the URT-IP method.

元の言語English
ページ(範囲)274-277
ページ数4
ジャーナルThin Solid Films
445
発行部数2
DOI
出版物ステータスPublished - 2003 12 15
外部発表Yes
イベントProceedings of the 3rd International Symposium on Transparent Oxide - Tokyo, Japan
継続期間: 2003 4 102003 4 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • これを引用

    Iwata, K., Sakemi, T., Yamada, A., Fons, P., Awai, K., Yamamoto, T., Matsubara, M., Tampo, H., & Niki, S. (2003). Growth and electrical properties of ZnO thin films deposited by novel ion plating method. Thin Solid Films, 445(2), 274-277. https://doi.org/10.1016/S0040-6090(03)01160-X