Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50 - 100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approx.28% for Ei = 100 eV and approx.18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

本文言語English
ページ(範囲)393-398
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
438
DOI
出版ステータスPublished - 1996
外部発表はい
イベントProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
継続期間: 1996 12 21996 12 6

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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