Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.

本文言語English
ページ(範囲)144-148
ページ数5
ジャーナルJournal of Crystal Growth
468
DOI
出版ステータスPublished - 2017 6月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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