TY - JOUR
T1 - Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications
AU - Tatebayashi, J.
AU - Kako, S.
AU - Ho, J.
AU - Ota, Y.
AU - Iwamoto, S.
AU - Arakawa, Y.
N1 - Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2017/6/15
Y1 - 2017/6/15
N2 - We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.
AB - We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.
KW - A3, Selective epitaxy
KW - A3. Metalorganic vapor phase epitaxy
KW - B2. Semiconductor III-V materials
KW - B3. Laser diodes
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U2 - 10.1016/j.jcrysgro.2016.12.022
DO - 10.1016/j.jcrysgro.2016.12.022
M3 - Article
AN - SCOPUS:85007583358
VL - 468
SP - 144
EP - 148
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -