Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy

Ken Nakahara, Tetsuhiro Tanabe, Hidemi Takasu, Paul Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Ralf Hunger, Shigeru Niki

研究成果: Article査読

86 被引用数 (Scopus)

抄録

High-quality undoped ZnO epitaxial films with mobilities as high as 120cm2V-1s-1 and carrier concentrations as low as 7.6 × 1016 cm-3 have been grown on (112̄0) a-sapphire substrates using low-temperature buffer layers, a slow substrate cooling process and a modified oxygen radical cell. Pole figure measurements reveal that a-plane sapphire substrates are effective for the elimination of 30° rotation domains, which usually appear in the case of ZnO growth on c-sapphire. The low-temperature buffer layers allow high-temperature growth, because initial ZnO growth does not occur with high initial growth temperature. The use of slow substrate cooling prevents the deterioration of the electrical properties of the ZnO films. Use of quartz insulators in the oxygen radical cell eliminates aluminum contamination, which is a serious problem when using conventional alumina insulators.

本文言語English
ページ(範囲)250-254
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
1
DOI
出版ステータスPublished - 2001 1月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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