抄録
The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.
本文言語 | English |
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ページ(範囲) | 504-510 |
ページ数 | 7 |
ジャーナル | Applied Surface Science |
巻 | 244 |
号 | 1-4 |
DOI | |
出版ステータス | Published - 2005 5 15 |
イベント | 12th International Conference on Solid Films and Surfaces - Hammatsu, Japan 継続期間: 2004 6 21 → 2004 6 25 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films