Growth of ZnO and device applications

K. Iwata, H. Tampo, A. Yamada, P. Fons, K. Matsubara, K. Sakurai, S. Ishizuka, S. Niki

研究成果: Conference article査読

34 被引用数 (Scopus)

抄録

The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.

本文言語English
ページ(範囲)504-510
ページ数7
ジャーナルApplied Surface Science
244
1-4
DOI
出版ステータスPublished - 2005 5 15
外部発表はい
イベント12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
継続期間: 2004 6 212004 6 25

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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