Growth of ZnO and device applications

K. Iwata, H. Tampo, A. Yamada, P. Fons, K. Matsubara, K. Sakurai, S. Ishizuka, S. Niki

研究成果: Conference article査読

34 被引用数 (Scopus)


The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.

ジャーナルApplied Surface Science
出版ステータスPublished - 2005 5 15
イベント12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
継続期間: 2004 6 212004 6 25

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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