Growth of ZnO and device applications

K. Iwata; H. Tampo; A. Yamada; P. Fons; K. Matsubara; K. Sakurai; S. Ishizuka; S. Niki

doi:10.1016/j.apsusc.2004.10.109

Growth of ZnO and device applications

K. Iwata, H. Tampo, A. Yamada, P. Fons, K. Matsubara, K. Sakurai, S. Ishizuka, S. Niki

電気情報工学科

研究成果: Conference article › 査読

34 被引用数 (Scopus)

抄録

The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm ² /(V s) and carrier concentrations of 7 × 10 ¹⁶ cm ^-3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.

本文言語	English
ページ（範囲）	504-510
ページ数	7
ジャーナル	Applied Surface Science
巻	244
号	1-4
DOI	https://doi.org/10.1016/j.apsusc.2004.10.109
出版ステータス	Published - 2005 5 15
イベント	12th International Conference on Solid Films and Surfaces - Hammatsu, Japan 継続期間: 2004 6 21 → 2004 6 25

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

文献へのアクセス

10.1016/j.apsusc.2004.10.109

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引用スタイル

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abstract = " The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.",

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T1 - Growth of ZnO and device applications

AU - Iwata, K.

AU - Tampo, H.

AU - Yamada, A.

AU - Fons, P.

AU - Matsubara, K.

AU - Sakurai, K.

AU - Ishizuka, S.

AU - Niki, S.

PY - 2005/5/15

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N2 - The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.

AB - The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.

KW - Bandgap engineering

KW - II-VI

KW - MBE

KW - ZnO

KW - ZnO on Si

KW - ZnOSe

KW - p-ZnO

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