Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy

Zon, Pakawat Phienlumlert, Supachok Thainoi, Suwit Kiravittaya, Aniwat Tandaechanurat, Noppadon Nuntawong, Suwat Sopitpan, Visittapong Yordsri, Chanchana Thanachayanont, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti-phase domain is the initial template to investigate the growth-rate effects on the growth of self-assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross-sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power-dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type-II band alignment characteristic is confirmed.

本文言語English
論文番号1800499
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
216
1
DOI
出版ステータスPublished - 2019 1月 9
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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