Hall coefficient and Hc2 in underdoped LaFeAsO 0.95F0.05

Y. Kohama, Y. Kamihara, S. Riggs, F. F. Balakirev, T. Atake, M. Jaime, M. Hirano, H. Hosono

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The electrical resistivity and Hall coefficient of LaFeAsO 0.95F0.05 polycrystalline samples were measured in pulsed magnetic fields up to μ0H=60 T from room temperature to 1.5 K. The resistance of the normal state shows a negative temperature coefficient (dρ/ dT<0) below 70 K for this composition, indicating insulating ground state in underdoped LaFeAsO system in contrast to heavily doped compound. The charge carrier density obtained from Hall effect can be described as constant plus a thermally activated term with an energy gap ΔE=630 K. The upper critical field, Hc2, estimated from resistivity measurements, exceeds 75 T with zero-field Tc=26.3 K, suggesting an unconventional nature for superconductivity.

本文言語English
論文番号37005
ジャーナルEPL
84
3
DOI
出版ステータスPublished - 2008 11月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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