Hardening by point defects in neutron irradiated AIN and sic.

Takayoshi Iseki, Mitsuharu Tezuka, Chang sam Kim, Tetsuya Suzuki, Hisayuki Suematsu, Toyohiko Yano

研究成果: Article査読

抄録

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785°C up to a fluence of 5.2 × 1024 n/m2. The hardness was increased by up to 51% in AlN and 84% in SiC, The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200~1,400°C annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400°C annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for hardening in irradiated AlN and SiC.

本文言語English
ページ(範囲)68-77
ページ数10
ジャーナルJournal of Nuclear Science and Technology
30
1
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学

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