High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

Masumi Saitoh, Kensuke Ota, Chika Tanaka, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

    研究成果: Conference contribution

    抄録

    Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I on improvement of short-channel NW nFETs and pFETs by adopting 100-oriented NW channel instead of conventional 110 channel [3]. Although low-field mobility in 100- and 110-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I on in short-channel 100-oriented NW Tr. than in 110 NW Tr. is still unclear. In order to clarify the determining factors of I on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.

    本文言語English
    ホスト出版物のタイトル2011 International Semiconductor Device Research Symposium, ISDRS 2011
    DOI
    出版ステータスPublished - 2011 12月 1
    イベント2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
    継続期間: 2011 12月 72011 12月 9

    出版物シリーズ

    名前2011 International Semiconductor Device Research Symposium, ISDRS 2011

    Other

    Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
    国/地域United States
    CityCollege Park, MD
    Period11/12/711/12/9

    ASJC Scopus subject areas

    • ハードウェアとアーキテクチャ
    • 電子工学および電気工学

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