High-frequency precise characterization of intrinsic FinFET channel

Hideo Sakai, Shinichi O'uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro

    研究成果: Article査読

    1 被引用数 (Scopus)

    抄録

    This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

    本文言語English
    ページ(範囲)752-760
    ページ数9
    ジャーナルIEICE Transactions on Electronics
    E95-C
    4
    DOI
    出版ステータスPublished - 2012 4

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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