High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

A. Kinoshita, C. Tanaka, K. Uchida, J. Koga

    研究成果: Conference article査読

    73 被引用数 (Scopus)

    抄録

    High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.

    本文言語English
    論文番号1469250
    ページ(範囲)158-159
    ページ数2
    ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
    2005
    DOI
    出版ステータスPublished - 2005 12 1
    イベント2005 Symposium on VLSI Technology - Kyoto, Japan
    継続期間: 2005 6 142005 6 14

    ASJC Scopus subject areas

    • 電子工学および電気工学

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