TY - JOUR
T1 - High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions
AU - Kinoshita, A.
AU - Tanaka, C.
AU - Uchida, K.
AU - Koga, J.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.
AB - High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.
UR - http://www.scopus.com/inward/record.url?scp=29244450764&partnerID=8YFLogxK
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U2 - 10.1109/.2005.1469250
DO - 10.1109/.2005.1469250
M3 - Conference article
AN - SCOPUS:29244450764
VL - 2005
SP - 158
EP - 159
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
M1 - 1469250
T2 - 2005 Symposium on VLSI Technology
Y2 - 14 June 2005 through 14 June 2005
ER -