High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.
|ジャーナル||Digest of Technical Papers - Symposium on VLSI Technology|
|出版ステータス||Published - 2005 12 1|
|イベント||2005 Symposium on VLSI Technology - Kyoto, Japan|
継続期間: 2005 6 14 → 2005 6 14
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