High-power GaN diode-pumped continuous wave Pr3+-doped LiYF 4 laser

Kohei Hashimoto, Fumihiko Kannari

    研究成果: Article査読

    46 被引用数 (Scopus)

    抄録

    A cw Pr3+: LiYF4 laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.

    本文言語English
    ページ(範囲)2493-2495
    ページ数3
    ジャーナルOptics Letters
    32
    17
    DOI
    出版ステータスPublished - 2007 9 1

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

    フィンガープリント 「High-power GaN diode-pumped continuous wave Pr<sup>3+</sup>-doped LiYF <sub>4</sub> laser」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル