High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

Junichiro Kojou, Yojiro Watanbe, Fumihiko Kannari

研究成果: Conference contribution

抜粋

A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

元の言語English
ホスト出版物のタイトルCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
DOI
出版物ステータスPublished - 2009 12 10
イベントCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China
継続期間: 2009 8 302009 9 3

出版物シリーズ

名前Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

OtherCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
China
Shanghai
期間09/8/3009/9/3

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

Kojou, J., Watanbe, Y., & Kannari, F. (2009). High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. : CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics [5292555] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2009.5292555