High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

Junichiro Kojou, Yojiro Watanbe, Fumihiko Kannari

    研究成果: Conference contribution

    抄録

    A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

    本文言語English
    ホスト出版物のタイトルCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
    DOI
    出版ステータスPublished - 2009 12 10
    イベントCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China
    継続期間: 2009 8 302009 9 3

    出版物シリーズ

    名前Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

    Other

    OtherCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
    CountryChina
    CityShanghai
    Period09/8/3009/9/3

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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