抄録
The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 305-307 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 54 |
| 号 | 5 |
| DOI | |
| 出版ステータス | Published - 2018 3 8 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学