High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy

S. Niki, P. J. Fons, A. Yamada, T. Kurafuji, S. Chichibu, H. Nakanishi, W. G. Bi, C. W. Tu

研究成果: Article査読

50 被引用数 (Scopus)

抄録

CuInSe2 films have been grown by molecular beam epitaxy on pseudo-lattice-matched substrates that consist of a 1-μm-thick In0.29Ga0.71As layer grown on a linearly composition-graded InxGa1-xAs buffer (0≤x≤0.29) grown in turn on GaAs (001). The properties of these films have been compared with those of the films grown directly on GaAs (001). High resolution x-ray diffraction analysis on CuInSe2 grown on pseudo-lattice-matched substrates indicated substantial reduction on residual strain in the CuInSe2 films. A photoluminescence spectrum dominated by sharp free exciton emissions has been observed for the first time from CuInSe2 films indicative of significant improvement in crystalline quality and substantial reduction in the point defect density.

本文言語English
ページ(範囲)647-649
ページ数3
ジャーナルApplied Physics Letters
69
5
DOI
出版ステータスPublished - 1996 7 29
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「High quality CuInSe<sub>2</sub> films grown on pseudo-lattice-matched substrates by molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル