High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids

E. Pelucchi; M. Baier; Y. Ducommun; S. Watanabe; E. Kapon

doi:10.1002/pssb.200303006

High-quality In_xGa_1-xAs/Al_0.30Ga_0.70As quantum dots grown in inverted pyramids

E. Pelucchi, M. Baier, Y. Ducommun, S. Watanabe, E. Kapon

研究成果: Article › 査読

29 被引用数 (Scopus)

抄録

We report here on the fabrication by organometallic chemical vapour deposition of In_xGa_1-xAs quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al_0.30Ga_0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.

本文言語	English
ページ（範囲）	233-236
ページ数	4
ジャーナル	Physica Status Solidi (B) Basic Research
巻	238
号	2
DOI	https://doi.org/10.1002/pssb.200303006
出版ステータス	Published - 2003 7月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

文献へのアクセス

10.1002/pssb.200303006

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引用スタイル

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AU - Kapon, E.

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