High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon

A. Yang, M. Steger, H. J. Lian, M. L.W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, S. A. Lyon, M. Konuma, M. Cardona

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We have studied the dependence of the lattice parameter of silicon on isotopic mass, using high-resolution photoluminescence spectroscopy to detect splittings of the shallow donor bound exciton transitions in epitaxial layers of either isotopically enriched Si28 or Si30 grown on silicon substrates of natural isotopic composition. The slight lattice parameter mismatch between the isotopically enriched epitaxial layer and the natural silicon substrate induces a biaxial strain in the epitaxial layer, which results in a splitting of the hole states in the bound exciton. This can be detected with remarkable precision, especially in the highly enriched Si28 epilayers, where the bound exciton lines are extremely sharp.

本文言語English
論文番号113203
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
77
11
DOI
出版ステータスPublished - 2008 3 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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