High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates

M. H. Baier, S. Watanabe, E. Pelucchi, E. Kapon

研究成果: Article査読

78 被引用数 (Scopus)

抄録

The uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QD) grown by chemical vapor deposition (CVD) on prepatterned substrates was analyzed. The pyramidal QD were fabricated by low pressure organometallic CVD on a (111)B-oriented GaAs substrate patterned with a 5 μm pitch hexagonal matrix of tetrahedral recesses. It was found that the observed inhomogeneous broadening of about 7.6 meV for a s-p separation energy of at least 55 meV is small compared to other QD systems. A high reproducibility of the sharp QD emission features in the single exciton regime was observed.

本文言語English
ページ(範囲)1943-1945
ページ数3
ジャーナルApplied Physics Letters
84
11
DOI
出版ステータスPublished - 2004 3月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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