Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

研究成果: Article査読

23 被引用数 (Scopus)

抄録

We demonstrate a highly uniform, dense stack of In0.22Ga0.78As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dotto-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

本文言語English
論文番号103104
ジャーナルApplied Physics Letters
105
10
DOI
出版ステータスPublished - 2014 9月 8
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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