Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

Yoshihiro Sugiyama, Yoshiaki Nakata, Shunichi Muto, Yuji Awano, Naoki Yokoyama

研究成果: Conference article

11 引用 (Scopus)

抜粋

We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γh) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γh larger than 3300. The dependence of writing power, electric field, and temperature on the Γh was also investigated using hole burning spectroscopy. The Γh broadened not only as the writing power increased over a few W/cm2 but also as the applied field increased. The Γh showed linear dependence on temperature, and the spectral hole was observed up to 80 K.

元の言語English
ページ(範囲)503-507
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
7
発行部数3
DOI
出版物ステータスPublished - 2000 5
外部発表Yes
イベントMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
継続期間: 1999 7 121999 7 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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