Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga

K. M. Itoh; E. E. Haller; J. W. Beeman; W. L. Hansen; J. Emes; L. A. Reichertz; E. Kreysa; T. Shutt; A. Cummings; W. Stockwell; B. Sadoulet; J. Muto; J. W. Farmer; V. I. Ozhogin

doi:10.1103/PhysRevLett.77.4058

Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped ⁷⁰Ge:Ga

K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, J. Emes, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, V. I. Ozhogin

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研究成果: Article › 査読

106 被引用数 (Scopus)

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We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched ⁷⁰Ge:Ga samples with the Ga concentration [Ga] near N_c for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T₀/T)^½ with T₀α(N_c − [Ga])/N_c while the zero temperature conductivity σ(0)of the metallic samples is T₀α(([Ga] −N_c)/N_c))^ν with the critical exponent ν ≈ 5. The values of N_c obtained from the two independent scalings of T₀ and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

本文言語	English
ページ（範囲）	4058-4061
ページ数	4
ジャーナル	Physical review letters
巻	77
号	19
DOI	https://doi.org/10.1103/PhysRevLett.77.4058
出版ステータス	Published - 1996

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1103/PhysRevLett.77.4058

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引用スタイル

Itoh, K. M., Haller, E. E., Beeman, J. W., Hansen, W. L., Emes, J., Reichertz, L. A., Kreysa, E., Shutt, T., Cummings, A., Stockwell, W., Sadoulet, B., Muto, J., Farmer, J. W., & Ozhogin, V. I. (1996). Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped ⁷⁰Ge:Ga. Physical review letters, 77(19), 4058-4061. https://doi.org/10.1103/PhysRevLett.77.4058

Itoh, KM, Haller, EE, Beeman, JW, Hansen, WL, Emes, J, Reichertz, LA, Kreysa, E, Shutt, T, Cummings, A, Stockwell, W, Sadoulet, B, Muto, J, Farmer, JW & Ozhogin, VI 1996, 'Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped ⁷⁰Ge:Ga', Physical review letters, vol. 77, no. 19, pp. 4058-4061. https://doi.org/10.1103/PhysRevLett.77.4058

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title = "Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga",

abstract = "We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.",

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T1 - Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga

AU - Itoh, K. M.

AU - Haller, E. E.

AU - Beeman, J. W.

AU - Hansen, W. L.

AU - Emes, J.

AU - Reichertz, L. A.

AU - Kreysa, E.

AU - Shutt, T.

AU - Cummings, A.

AU - Stockwell, W.

AU - Sadoulet, B.

AU - Muto, J.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

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N2 - We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

AB - We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

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